? 2005 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c25 a v ge = 0 v t j = 125 c 250 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15v 2.7 3.3 v igbt optimized for switching up to 35 khz symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c28a i c110 t c = 110 c14a i cm t c = 25 c, 1 ms 56 a ssoa v ge = 15 v, t vj = 125 c, r g = 100 ? i cm = 28 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. weight to-220 4 g to-263 2 g ds99382(04/05) features ? international standard packages jedec to-220ab and to-263aa ? low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies ? capacitor discharge advantages ? easy to mount with one screw ? reduces assembly time and cost ? high power density g e c (tab) to-263 aa (ixga) g c e to-220ab (ixgp) ixga 14n120b ixgp 14n120b preliminary data sheet v ces = 1200 v i c25 = 28 a v ce(sat) = 3.3 v
ixys reserves the right to change limits, test conditions, and dimensions. to-263 aa outline 1. gate 2. collector 3. emitter 4. collector bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 pins: 1 - gate 2 - collector 3 - emitter 4 - collector bottom side to-220 ab dimensions symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c110 v ce = 10 v 5.0 9.0 s pulse test, t 300 s, duty cycle 2 % i c(on) v ge = 10 v, v ce = 10v 35 a c ies 535 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 36 pf c res 14 pf q g 30 nc q ge i c = i c110 , v ge = 15 v, v ce = 0.5 v ces 6.0 nc q gc 12 nc t d(on) 15 ns t ri 30 ns t d(off) 500 750 ns t fi 330 500 ns e off 2.6 4.0 mj t d(on) 15 ns t ri 30 ns e on 0.8 mj t d(off) 610 ns t fi 600 ns e off 4.85 mj r thjc 0.83 k/w r thck to-220 0.5 k/w inductive load, t j = 25 c i c =i c110 , v ge = 15 v v ce = 960 v, r g = r off = 120 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c110 , v ge = 15 v v ce = 960 v, r g = r off = 120 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g min. recommended footprint (dimensions in inches and mm) ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 ixga 14n120b ixgp 14n120b
? 2005 ixys all rights reserved ixga 14n120b ixgp 14n120b fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 02468101214161820 v c e - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 28 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 28 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 4. dependence of v ce (sat) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalized i c = 14a i c = 7a v ge = 15v i c = 28a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 6 7 8 9 10 11 12 13 14 15 v g e - volts v c e - volts t j = 25oc i c = 28a 14a 7a fig. 6. input adm ittance 0 2 4 6 8 10 12 14 16 18 20 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 v g e - volts i c - amperes t j = 125oc 25oc -40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixga 14n120b ixgp 14n120b fig. 7. transconductance 0 1 2 3 4 5 6 7 8 9 10 11 0 2 4 6 8 10 12 14 16 18 20 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. dependence of turn-off en e r g y o n r g 0 2 4 6 8 10 12 14 16 100 150 200 250 300 350 400 450 500 r g - ohms e o f f - millijoules i c = 7a t j = 125oc v ge = 15v v ce = 960v i c = 14a i c = 28a fig. 9. dependence of turn-off en e r g y on i c 0 1 2 3 4 5 6 7 8 9 10 11 6 8 10 12 14 16 18 20 22 24 26 28 i c - amperes e o f f - millijoules r g = 120 ? v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy on temperature 0 1 2 3 4 5 6 7 8 9 10 11 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 28a r g = 120 ? v ge = 15v v ce = 960v i c = 14a i c = 7a fig. 11. dependence of turn-off switching time on r g 200 400 600 800 1000 1200 1400 1600 1800 2000 100 150 200 250 300 350 400 450 500 r g - ohms switching time - nanoseconds t d(off) t fi - - - - - t j = 125oc v ge = 15v v ce = 960v i c = 7a 14a 28a 14a 7a fig. 12. dependence of turn-off sw itching tim e on i c 100 200 300 400 500 600 700 800 900 1000 6 8 10 12 14 16 18 20 22 24 i c - amperes switching time - nanoseconds t d( off) , t fi - - - - - r g = 120 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc
? 2005 ixys all rights reserved ixga 14n120b ixgp 14n120b fig. 15. gate charge 0 2 4 6 8 10 12 14 16 0 3 6 9 12 15 18 21 24 27 30 q g - nanocoulombs v g e - volts v ce = 600v i c = 14a i g = 10ma fig. 16. capacitance 10 100 1000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 100 200 300 400 500 600 700 800 900 1000 1100 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds i c = 28a 14a 7a t d(off) t fi - - - - - r g = 120 ? v ge = 15v v ce = 960v i c = 7a 14a 28a fig. 14. reverse-bias safe operating area 0 3 6 9 12 15 18 21 24 27 30 100 200 300 400 500 600 v c e - volts i c - amperes t j = 125 o c r g = 120 ? dv/dt < 10v/ns fig. 17. maximum transient thermal resistance 0.1 1 0.1 1 10 100 1000 pulse width - milliseconds r (th )jc - oc/w
|
